Domain switching of fatigued ferroelectric thin films

Yun Tak Lim; Jong Yeog Son; Young-Han Shin
May 2014
Applied Physics Letters;5/12/2014, Vol. 104 Issue 19, p1
Academic Journal
We investigate the domain wall speed of a ferroelectric PbZr0.48Ti0.52O3 (PZT) thin film using an atomic force microscope incorporated with a mercury-probe system to control the degree of electrical fatigue. The depolarization field in the PZT thin film decreases with increasing the degree of electrical fatigue. We find that the wide-range activation field previously reported in ferroelectric domains result from the change of the depolarization field caused by the electrical fatigue. Domain wall speed exhibits universal behavior to the effective electric field (defined by an applied electric field minus the depolarization field), regardless of the degree of the electrical fatigue.


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