TITLE

Domain wall stability in ferroelectrics with space charges

AUTHOR(S)
Zuo, Yinan; Genenko, Yuri A.; Klein, Andreas; Stein, Peter; Baixiang Xu
PUB. DATE
February 2014
SOURCE
Journal of Applied Physics;2014, Vol. 115 Issue 8, p1
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Significant effect of semiconductor properties on domain configurations in ferroelectrics is demonstrated, especially in the case of doped materials. Phase field simulations are performed for ferroelectrics with space charges due to donors and electronic charge carriers. The free charges introduced thereby can act as a source for charge compensation at domain walls with uncompensated polarization bound charges. Results indicate that the equilibrium position of a domain wall with respect to its rotation in a head-to-head or a tail-to-tail domain configuration depends on the charge defect concentration and the Fermi level position.
ACCESSION #
95694480

 

Related Articles

  • Magnetic domain wall transfer via graphene mediated electrostatic control. Duan, X.; Stephanovich, V. A.; Semenov, Y. G.; Kim, K. W. // Applied Physics Letters;7/2/2012, Vol. 101 Issue 1, p013103 

    A mechanism that enables electrically controlled magnetic domain wall transfer in a ferromagnetic insulator (FMI) is investigated theoretically by utilizing graphene as a crucial mediating material. The concept is grounded on the variability of the exchange interaction energy between a...

  • Cells positioning using magnetic domain walls of ferromagnetic zigzag thin film. Huang, Hao-Ting; Chen, Chia-Yi; Lai, Mei-Feng // Journal of Applied Physics;Apr2011, Vol. 109 Issue 7, p07B315 

    Magnetic cell positioning is demonstrated by controlling the magnetic domain walls in ferromagnetic zigzag thin films. Magnetophoresis experiment is performed to determine the number of magnetic nanoparticles that enter the cells by endocytosis. It is observed that in the zigzag structure with...

  • Magnetization reversal in ferromagnetic spirals via domain wall motion. Schumm, Ryan D.; Kunz, Andrew // Applied Physics Letters;11/14/2016, Vol. 109 Issue 20, p202405-1 

    Domain wall dynamics have been investigated in a variety of ferromagnetic nanostructures for potential applications in logic, sensing, and recording. We present a combination of analytic and simulated results describing the reliable field driven motion of a domain wall through the arms of a...

  • Domain wall conductivity in KTiOPO4 crystals. Lindgrena, G.; Canalias, C. // APL Materials;2017, Vol. 5 Issue 7, p1 

    We study the local ionic conductivity of ferroelectric domain walls and domains in KTiOPO4 single-crystals. We show a fourfold increase in conductivity at the domain walls, compared to that of the domains, attributed to an increased concentration of defects. Our current-voltage measurements...

  • First-principles study of charged steps on 180° domain walls in ferroelectric PbTiO3. Jiang, Y. X.; Wang, Y. J.; Chen, D.; Zhu, Y. L.; Ma, X. L. // Journal of Applied Physics;2017, Vol. 122 Issue 5, p054101-1 

    The atomic-scale mechanism of domain wall motion in ferroelectrics is commonly accepted to be nucleation and the movement of steps on the domain walls. Although very important in understanding the mechanism of domain wall motion and domain switching, the detailed atomic structures of steps have...

  • Condition of the ratchet effect of a magnetic domain wall motion under an asymmetric potential energy. Piao, Hong-Guang; Zhang, Xiaozhong; Choi, Hyeok-Cheol; Kim, Dong-Hyun; You, Chun-Yeol // Journal of Applied Physics;Apr2012, Vol. 111 Issue 7, p07D301 

    We have investigated the ratchet effect of magnetic domain wall (DW) motion in a straight ferromagnetic nanowire under ac magnetic field by means of micromagnetic simulation. A structure-stable DW ratchet effect along the ferromagnetic nanowire is observed utilizing an asymmetric potential...

  • Multiple 360° domain wall switching in thin ferromagnetic nanorings in a circular magnetic field. Goldman, Abby; Licht, Abigail S.; Sun, Yineng; Li, Yihan; Pradhan, Nihar R.; Yang, Tianyu; Tuominen, Mark T.; Aidala, Katherine E. // Journal of Applied Physics;Apr2012, Vol. 111 Issue 7, p07D113 

    Micromagnetic simulations of the vortex switching process of thin ferromagnetic rings under the application of a circular field, as if created from a current-carrying wire passing through the ring center, reveal that for rings with sub-micron dimensions and thicknesses on the order of the...

  • Asymmetric Pt/Co/Pt-stack induced sign-control of current-induced magnetic domain-wall creep. Lavrijsen, R.; Haazen, P. P. J.; Murè, E.; Franken, J. H.; Kohlhepp, J. T.; Swagten, H. J. M.; Koopmans, B. // Applied Physics Letters;6/25/2012, Vol. 100 Issue 26, p262408 

    We report experimentally obtained magnetic domain wall (DW) velocities of current-assisted field-driven DW creep in perpendicularly magnetized Pt/Co/Pt. We have intentionally introduced an asymmetry in the stacks by using different thicknesses of the two Pt layers sandwiching the Co layer....

  • Influence of transverse fields on domain wall pinning in ferromagnetic nanostripes. Glathe, S.; Hübner, U.; Mattheis, R.; Seidel, P. // Journal of Applied Physics;7/15/2012, Vol. 112 Issue 2, p023911 

    We report an experimental study dealing with the influence of in-plane transverse fields on the domain wall (DW) pinning in ferromagnetic nanostripes. We analyzed the pinning probability and depinning fields for several fabrication induced pinning sites. For all measurements reported here, the...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics