Voltage-gated pinning in a magnetic domain-wall conduit

Franken, J. H.; Yin, Y.; Schellekens, A. J.; van den Brink, A.; Swagten, H. J. M.; Koopmans, B.
September 2013
Applied Physics Letters;9/2/2013, Vol. 103 Issue 10, p102411
Academic Journal
In spintronic devices relying on magnetic domain-wall (DW) motion, robust control over the DW position is required. We use electric-field control of perpendicular magnetic anisotropy to create a voltage-gated pinning site in a microstructured Pt/Co/AlOx DW conduit. A DW pins at the edge of a gate electrode, and the strength of pinning can be tuned linearly and reversibly with an efficiency of 0.22(1) mT/V. This result is supported by a micromagnetic model, taking full account of the anisotropy step at the gate edge, which is directly caused by a change in the electron density due to the choice of material.


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