Magnetic domain wall transfer via graphene mediated electrostatic control

Duan, X.; Stephanovich, V. A.; Semenov, Y. G.; Kim, K. W.
July 2012
Applied Physics Letters;7/2/2012, Vol. 101 Issue 1, p013103
Academic Journal
A mechanism that enables electrically controlled magnetic domain wall transfer in a ferromagnetic insulator (FMI) is investigated theoretically by utilizing graphene as a crucial mediating material. The concept is grounded on the variability of the exchange interaction energy between a ferromagnetic insulator and a proximate graphene layer with an inhomogeneous carrier density. A memory device prototype is proposed based on the effect that does not require an active current for its intrinsic function. Our analysis illustrates the highly efficient device operation, with an estimated switching energy of 10-16 J for one binary bit of nonvolatile information.


Related Articles

  • Cells positioning using magnetic domain walls of ferromagnetic zigzag thin film. Huang, Hao-Ting; Chen, Chia-Yi; Lai, Mei-Feng // Journal of Applied Physics;Apr2011, Vol. 109 Issue 7, p07B315 

    Magnetic cell positioning is demonstrated by controlling the magnetic domain walls in ferromagnetic zigzag thin films. Magnetophoresis experiment is performed to determine the number of magnetic nanoparticles that enter the cells by endocytosis. It is observed that in the zigzag structure with...

  • Imaging the Surface Domain Structure of Amorphous Glass-Coated Microwires by Bitter Colloid. RICHTER, K.; VARGA, R.; THIAVILLE, A. // Acta Physica Polonica, A.;Jul2014, Vol. 126 Issue 1, p72 

    The fast domain wall dynamics of amorphous glass-coated microwires can be changed drastically by properly selected annealing temperature. Here, the effect of thermal annealing on the surface domain structure of microwires is examined. Imaging the surface domain structure by Bitter colloid...

  • Spatially periodic domain wall pinning potentials: Asymmetric pinning and dipolar biasing. Metaxas, P. J.; Zermatten, P.-J.; Novak, R. L.; Rohart, S.; Jamet, J.-P.; Weil, R.; Ferré, J.; Mougin, A.; Stamps, R. L.; Gaudin, G.; Baltz, V.; Rodmacq, B. // Journal of Applied Physics;Feb2013, Vol. 113 Issue 7, p073906 

    Domain wall propagation has been measured in continuous, weakly disordered, quasi-two-dimensional, Ising-like magnetic layers that are subject to spatially periodic domain wall pinning potentials. The potentials are generated non-destructively using the stray magnetic field of ordered arrays of...

  • Control of domain wall motion at vertically etched nanotrench in ferromagnetic nanowires. Narayanapillai, Kulothungasagaran; Yang, Hyunsoo // Applied Physics Letters;12/16/2013, Vol. 103 Issue 25, p252401 

    We study field-induced domain wall motion in permalloy nanowires with vertically etched nanotrench pinning site. Micromagnetic simulations and electrical measurements are employed to characterize the pinning potential at the nanotrench. It is found that the potential profile for a transverse...

  • Penetration depth and absorption mechanisms of spin currents in Ir20Mn80 and Fe50Mn50 polycrystalline films by ferromagnetic resonance and spin pumping. Merodio, P.; Ghosh, A.; Lemonias, C.; Gautier, E.; Ebels, U.; Chshiev, M.; Béa, H.; Baltz, V.; Bailey, W. E. // Applied Physics Letters;1/20/2014, Vol. 104 Issue 3, p032406-1 

    Spintronics relies on the spin dependent transport properties of ferromagnets (Fs). Although antiferromagnets (AFs) are used for their magnetic properties only, some fundamental F-spintronics phenomena like spin transfer torque, domain wall motion, and tunnel anisotropic magnetoresistance also...

  • Stress-Induced Changes in Closure Domain Structure Dynamics in Bistable Ferromagnetic Microwire. ONUFER, J.; ZIMAN, J.; KLADIVOVÁ, M. // Acta Physica Polonica, A.;Jul2014, Vol. 126 Issue 1, p80 

    A new experimental method for the study of closure domain structure dynamics in bistable ferromagnetic microwires is proposed. The simple experimental set-up enables detection of the presence of a free domain wall in the wire after application of a well-defined rectangular magnetic field pulse....

  • Single Domain Wall Contribution to the Impedance of Amorphous Ferromagnetic Wire. ZIMAN, J.; ŠUHAJOVÁ, V.; KLADIVOVÁ, M. // Acta Physica Polonica, A.;Jul2014, Vol. 126 Issue 1, p82 

    An experiment, measuring the changes of impedance in a magnetic wire, caused by the presence of a single domain wall was proposed. The results obtained from a magnetic wire with small helical anisotropy show that for lower frequencies (up to about 1 MHz), the presence of wall causes an increase...

  • Fast Magnetization Switching in Amorphous Microwires. ZHUKOV, A.; IPATOV, M.; BLANCO, J. M.; CHIZHIK, A.; TALAAT, A.; ZHUKOVA, V. // Acta Physica Polonica, A.;Jul2014, Vol. 126 Issue 1, p7 

    We studied the magnetization switching in magnetically bistable amorphous ferromagnetic microwires. We observed quite fast domain wall propagation along the microwires and a correlation between the magnetoelastic anisotropy, distribution of the local nucleation field along the length of...

  • Enhanced controllability of domain-wall pinning by selective domain-wall injection. Ahn, Sung-Min // Journal of Applied Physics;May2013, Vol. 113 Issue 17, p17B501 

    It is experimentally reported that depinning fields of domain walls (DWs) under an interaction between magnetic charges distributed at a nanobar and at a notch can be enhanced by controlling injection fields for injecting DWs into the ferromagnetic nanowire with an asymmetrical nucleation pad....


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics