Pylypiv, V. M.; Garpul, O. Z.; Kurovets, V. V.
January 2012
International Conference: Radiation Interaction with Material & ;2012, p205
Conference Paper
This paper presents research results of near-surface layers of YIG films implanted by Si ions with energy of 90 keV and doses of 1·1013, 6·1013 and 2·1014 cm-2. The mathematical simulation of ion implantation of Si+ in YIG film showed that the formation of Frenkel pairs of defects and more complex type are equiprobable. Theoretically calculated concentration profile of radiation defects, which are mainly formed by defects formed as a result of elastic interactions of ion-implant atoms from the target. It was experimentally established that the implantation of Si+ ions in YIG films leads to the formation in the surface layer, monotonously descending profiles of relative deformation.


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