Electron transport properties of InAs ultrathin films obtained by epitaxial lift-off and van der Waals bonding on flexible substrates

Takita, Hayato; Hashimoto, Norihiko; Nguyen, Cong Thanh; Kudo, Masahiro; Akabori, Masashi; Suzuki, Toshi-kazu
July 2010
Applied Physics Letters;7/5/2010, Vol. 97 Issue 1, p012102
Academic Journal
We investigated InAs ultrathin films on flexible substrates. InAs layers grown on GaAs(001) are separated by epitaxial lift-off (ELO), followed by van der Waals bonding (VWB) on flexible substrates. We employed “normal” and “inverted” VWB; in the former, top and bottom sides are maintained during ELO and VWB, while inverted in the latter. From the InAs on flexible substrates, we fabricated Hall-bar devices with recess etch-thinning, using which electron transport properties depending on InAs layer thickness were characterized. For the inverted VWB, we observe very high electron mobilities of InAs ultrathin films, such as ∼10 000 cm2/V s for ∼100 nm thickness and ∼7000 cm2/V s for ∼20 nm. These carrier mobilities are highest not only for thin films on flexible substrates but also for InAs thin films; higher than those of InAs films grown on GaAs(111)A and membranes fabricated from them.


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