TITLE

Modeling of the effects of different substrate materials on the residual thermal stresses in the aluminum nitride crystal grown by sublimation

AUTHOR(S)
Lee, R. G.; Idesman, A.; Nyakiti, L.; Chaudhuri, J.
PUB. DATE
February 2009
SOURCE
Journal of Applied Physics;Feb2009, Vol. 105 Issue 3, pN.PAG
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A three-dimensional numerical finite element modeling method is applied to compare interfacial residual thermal stress distribution in AlN single crystals grown by using different substrates such as silicon carbide, boron nitride, tungsten, tantalum carbide, and niobium carbide. A dimensionless coordinate system is used which reduces the numbers of computations and hence simplifies the stress analysis. All components of the stress distribution, both in the film and in the substrate, including the normal stress along the growth direction as well as in-plane normal stresses and shear stresses are fully investigated. This information about the stress distribution provides insight into understanding and controlling the AlN single crystal growth by the sublimation technique. The normal stress in the film at the interface along the growth direction and the shear stresses are zero except at the edges, whereas in-plane stresses are nonzero. The in-plane stresses are compressive when TaC and NbC substrates are used. A small compressive stress might be beneficial in prohibiting crack growth in the film. The compressive stress in the AlN is lower for the TaC substrate than that for the NbC. Tensile in-plane stresses are formed in the AlN for 6H-SiC, BN, and W substrates. This tensile stress in the film is detrimental as it will assist in the crack growth. The stress concentration at the edges of the AlN film at the interface is compressive in nature when TaC and NbC are used as a substrate. This causes the film to bend downward (i.e., convex shape) and assist it to adhere to the substrate. The AlN film curves upward or in a concave shape when SiC, BN, and W substrates are used since the stress concentration at the edges of the AlN film is tensile at the interface and this may cause detachment of the film from the substrate.
ACCESSION #
36534235

 

Related Articles

  • FEM thermal and stress analysis of bonded GaN-on-diamond substrate. Wenbo Zhai; Xudong Chen; Jingwen Zhang; Renan Bu; Hongxing Wang; Xun Hou // AIP Advances;2017, Vol. 7 Issue 9, p095105-1 

    A three-dimensional thermal and stress analysis of bonded GaN on diamond substrate is investigated using finite element method. The transition layer thickness, thermal conductivity of transition layer, diamond substrate thickness and the area ratio of diamond and GaN are considered and treated...

  • Direct evidence of strain transfer for InAs island growth on compliant Si substrates. Marçal, L. A. B.; Richard, M.-I.; Magalhâes-Paniago, R.; Cavallo, F.; Lagally, M. G.; Schmidt, O. G.; Schülli, T. Ü.; Deneke, Ch.; Malachias, Angelo // Applied Physics Letters;4/13/2015, Vol. 106 Issue 15, p1 

    Semiconductor heteroepitaxy on top of thin compliant layers has been explored as a path to make inorganic electronics mechanically flexible as well as to integrate materials that cannot be grown directly on rigid substrates. Here, we show direct evidences of strain transfer for InAs islands on...

  • Structure and transport properties of nanocarbon films prepared by sublimation on a 6 H-SiC surface. Agrinskaya, N.; Berezovets, V.; Kozub, V.; Kotousova, I.; Lebedev, A.; Lebedev, S.; Sitnikova, A. // Semiconductors;Feb2013, Vol. 47 Issue 2, p301 

    The transport properties of nanocarbon layers on a 6 H-SiC substrate, grown by vacuum sublimation, are studied. It is found that these layers consist of a graphene layer adjacent to the substrate and a multigraphene layer coated with a polycrystalline carbine-like phase. In this case, the...

  • Effect of the nand p-type Si(100) substrates with a SiC buffer layer on the growth mechanism and structure of epitaxial layers of semipolar AlN and GaN. Bessolov, V.; Grashchenko, A.; Konenkova, E.; Myasoedov, A.; Osipov, A.; Red'kov, A.; Rodin, S.; Rubets, V.; Kukushkin, S. // Physics of the Solid State;Oct2015, Vol. 57 Issue 10, p1966 

    A new effect of the n-and p-type doping of the Si(100) substrate with a SiC film on the growth mechanism and structure of AlN and GaN epitaxial layers has been revealed. It has been experimentally shown that the mechanism of AlN and GaN layer growth on the surface of a SiC layer synthesized by...

  • Thermal Cycling Behavior of Thermal Barrier Coatings with HVOF NiCrAlY Bond Coat. Ni, L. Y.; Liu, C.; Huang, H.; Zhou, C. G. // Journal of Thermal Spray Technology;Sep2011, Vol. 20 Issue 5, p1133 

    Thermal Barrier Coatings with HVOF NiCrAlY Bond Coat is prepared on nickel-based superalloy substrates. The lifetime of the coating is about 1630 h for 1-h cycle at 1050 °C. Growth of the TGO (thermally grown oxide) approximately follows a parabolic kinetics, and the TGO presents a bi-layered...

  • EFFECT OF MATERIAL THICKNESS ON RESIDUAL STRESSES ORIGINATED FROM COOLING PROCESS IN DENTAL RESTORATIONS. DURANAY, Mehmet // Isi Bilimi ve Teknigi Dergisi / Journal of Thermal Science & Tec;2014, Vol. 34 Issue 1, p1 

    The main aim of this investigation is to depict the effect of veneering and substrate material thicknesses on the residual stresses occurred on dental restoration after cooling process. The finite element method was used to determine residual stresses distribution on dental restoration. To this...

  • FE modeling of stress distribution in MAO coating on TC4 substrate under thermal shock cyclic loading. Yesheng Zhong; Liping Shi; Mingwei Li; Jia Yu; Jianhan Liang; Mingbo Sun; Xiaodong He // Advanced Materials Research;2014, Vol. 941-944, p1629 

    A numerical study using finite element analysis (FEA) was performed to investigate the thermal, shear and radial stresses developed in MAO coating on substrate of TC4 under thermal cycle loading. The four-node quadrilateral thermal solid element PLANE55 and four-node quadrilateral structural...

  • Influence of source-to-substrate distance on the properties of ZnS films grown by close-space sublimation. Ashrat, M.; Mehmood, M.; Qayyum, A. // Semiconductors;Oct2012, Vol. 46 Issue 10, p1326 

    ZnS films were deposited on soda glass at various source-to-substrate distances by closespace sublimation. The influence of source-to-substrate distance on the structural and optical properties of the films was investigated. XRD spectra showed that films were crystalline in nature having cubic...

  • A parametric investigation on thermally driven edge cracking of a coating-substrate system. Chen, Xuejun; Liu, Qi; Ma, Qian // Journal of Coatings Technology & Research;Sep2012, Vol. 9 Issue 5, p541 

    In this article, the thermally driven edge-cracking behavior of a coating-substrate system has been investigated. The transient thermal stress field has been derived in a closed form for the corresponding uncracked counterpart medium. By applying the equal thermal stresses but with opposite sign...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics