TITLE

Ferroelectric domain inversion: The role of humidity

AUTHOR(S)
Dahan, D.; Molotskii, M.; Rosenman, G.; Rosenwaks, Y.
PUB. DATE
October 2006
SOURCE
Applied Physics Letters;10/9/2006, Vol. 89 Issue 15, p152902
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The authors report on the effect of ambient humidity on domain inversion in ferroelectrics using atomic force microscopy. It is shown that the size of single domains inverted under low humidity in stoichiometric lithium tantalate single crystals is much smaller relative to ambient conditions. These differences are due to the much smaller tip-sample capacitance under low humidity. This phenomenon paves the way for the use of atomic force microscopy to tailor various nanodomain configurations for nonlinear optical applications.
ACCESSION #
22752310

 

Related Articles

  • Piezoelectric and pyroelectric properties of ferroelectric Langmuir-Blodgett polymer films. Bune, A.V.; Zhu, Chuanxing // Journal of Applied Physics;6/1/1999, Vol. 85 Issue 11, p7869 

    Discusses a study which measured piezoelectric and pyroelectric responses in high-quality ferroelectric copolymer polyvinyl fluoride (PVDF)/trifluoroethylene (TrFE) films. Discussion of the piezoelectric and pyroelectric responses of PVDF/TrFE; Effect of ferroelectric polarization direction...

  • The Influence of Grain Boundaries and Texture on Ferroelectric Domain Hysteresis. Nath, R.; García, R. E.; Blendell, J. E.; Huey, B. D. // JOM: The Journal of The Minerals, Metals & Materials Society (TM;Jan2007, Vol. 59 Issue 1, p17 

    As ferroelectric device dimensions continue to shrink, the increasing ratio of boundary to bulk necessitates a thorough understanding of interfacial properties. Accordingly, the local piezoelectric hysteresis of a polycrystalline lead zirconate titanate thin film is quantitatively measured and...

  • Simultaneous measurement of the piezoelectric and dielectric response of nanoscale ferroelectric capacitors by an atomic force microscopy based approach. Petraru, A.; Nagarajan, V.; Kohlstedt, H.; Ramesh, R.; Schlom, D. G.; Waser, R. // Applied Physics A: Materials Science & Processing;Jul2006, Vol. 84 Issue 1/2, p67 

    We present a sensitive method to simultaneously acquire the C(V ) characteristics and piezoresponse of sub-micron size ferroelectric capacitors using an Atomic Force Microscope (AFM). Model Pt/(La0.5,Sr0.5)CoO3/PbZr0.4Ti0.6 O3/(La0.5,Sr0.5)CoO3/La:SrTiO3/Si nanocapacitors were fabricated by...

  • Giant tunnel electroresistance with PbTiO3 ferroelectric tunnel barriers. Crassous, A.; Garcia, V.; Bouzehouane, K.; Fusil, S.; Vlooswijk, A. H. G.; Rispens, G.; Noheda, B.; Bibes, M.; Barthélémy, A. // Applied Physics Letters;1/25/2010, Vol. 96 Issue 4, p042901 

    The persistency of ferroelectricity in ultrathin films allows their use as tunnel barriers. Ferroelectric tunnel junctions are used to explore the tunneling electroresistance effect—a change in the electrical resistance associated with polarization reversal in the ferroelectric barrier...

  • Exchange biasing and electric polarization with YMnO3. Martí, X.; Sánchez, F.; Hrabovsky, D.; Fàbrega, L.; Ruyter, A.; Fontcuberta, J.; Laukhin, V.; Skumryev, V.; García-Cuenca, M. V.; Ferrater, C.; Varela, M.; Vilà, A.; Lüders, U.; Bobo, J. F. // Applied Physics Letters;7/17/2006, Vol. 89 Issue 3, p032510 

    We report on the growth and functional characterizations of epitaxial thin films of the multiferroic YMnO3. We show that using Pt as a seed layer on SrTiO3(111) substrates, epitaxial YMnO3 films (0001) textured are obtained. An atomic force microscope has been used to polarize electric domains...

  • Domain reversal and nonstoichiometry in lithium tantalate. Kim, Sungwon; Gopalan, Venkatraman; Kitamura, K.; Furukawa, Y. // Journal of Applied Physics;9/15/2001, Vol. 90 Issue 6 

    Recent studies have shown that lithium nonstoichiometry has a tremendous influence on domain reversal characteristics in ferroelectric lithium tantalate. This work presents a systematic study of the domain reversal characteristics such as threshold coercive fields for domain reversal, domain...

  • Principle of ferroelectric domain imaging using atomic force microscope. Hong, Seungbum; Woo, Jungwon; Shin, Hyunjung; Jeon, Jong Up; Pak, Y. Eugene; Colla, Enrico L.; Setter, Nava; Kim, Eunah; No, Kwangsoo // Journal of Applied Physics;1/15/2001, Vol. 89 Issue 2, p1377 

    The contrast mechanisms of domain imaging experiments assisted by atomic force microscope (AFM) have been investigated by model experiments on nonpiezoelectric (silicon oxide) and piezoelectric [Pb(Zr,Ti)O[sub 3]] thin films. The first step was to identify the electrostatic charge effects...

  • Local magnetostrictive response of small magnetic entities in artificial Fe–Cr composites. Polushkin, Nikolay I.; Wittborn, J.; Canalias, C.; Rao, K. V.; Alexeev, A. M.; Popkov, A. F. // Journal of Applied Physics;9/1/2002, Vol. 92 Issue 5, p2779 

    Nanoscale ferromagnetic entities are directly patterned in superparamagnetic Fe-Cr layers by interfering laser beams. To characterize the formed entities, in addition to the conventional methods, we used a technique for magnetic imaging based on the atomic force microscopy (AFM) with nonmagnetic...

  • Magnetic domain and domain-wall imaging of submicron Co dots by probing the magnetostrictive response using atomic force microscopy. Wittborn, J.; Rao, K. V.; Nogués, J.; Schuller, Ivan K. // Applied Physics Letters;5/15/2000, Vol. 76 Issue 20 

    An approach to image the domains and domain walls of small ferromagnetic entities using atomic force microscopy (AFM), with a nonmagnetic AFM probe, has been developed. Exciting the sample in an external ac magnetic field, the distribution of magnetostrictive response at the surface is detected....

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics