Photoacoustic Fourier transform infrared spectroscopy of nanoporous SiOx/Si thin films with varying porosities

Yang, D.-Q.; Meunier, M.; Sacher, E.
December 2005
Journal of Applied Physics;12/1/2005, Vol. 98 Issue 11, p114310
Academic Journal
Nanostructured SiOx/Si thin films, over a large range of porosities, were deposited by the excimer laser ablation (KrF, 248 nm) of Si targets in He; they have been characterized by photoacoustic Fourier transform infrared spectroscopy, which necessitates exposure to air with subsequent oxidation. In particular, the IR Si–O–Si asymmetric stretching region, from 1000 to 1300 cm-1, has been found to be composed of four components: P1 at 1045 cm-1, P2 at 1060 cm-1, P3 at 1090 cm-1, and P4 at 1170 cm-1. The photoacoustic signals were enhanced with increasing film porosity, as previously found for larger scale porous materials; those for P2–4 also correlated with similar increases in the O–H and C–Hn surface contaminant stretching peaks, indicating their sources to be in the surface region. We demonstrate that the experimental data fully support a previously proposed theoretical relationship, originally developed for powders.


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