Modification of the Near-Surface Layer of n-Si by Hydrogen Ions in a High-Voltage Pulsed Beam Discharge

Demkin, V. P.; Mel'nichuk, S. V.; Semukhin, B. S.
April 2005
Technical Physics Letters;Apr2005, Vol. 31 Issue 4, p295
Academic Journal
The near-surface layer of n-Si single crystal wafers has been subjected to microdoping by hydrogen ions in the plasma of a pulsed beam discharge. The resistivity and the current density of the samples have been studied as functions of the hydrogen treatment time. The hydrogen-modified n-Si samples exhibit photo emf. The results are interpreted within the framework of a qualitative model. © 2005 Pleiades Publishing, Inc.


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