Reactive Wetting of SiO2 Substrates by Molten Al

Ping Shen; Fujii, Hidetoshi; Matsumoto, Taihei; Nogi, Kiyoshi
February 2004
Metallurgical & Materials Transactions. Part A;Feb2004, Vol. 35 Issue 2, p583
Academic Journal
The reactive wetting behavior of SiO2 substrates by molten Al was investigated at temperatures between 800°C to 1250°C in a purified Ar-3 pct H2 atmosphere of about 0.11 MPa using an improved sessile drop method. The time dependence of the changes in contact angle and droplet geometry was monitored and the wetting kinetics was identified. The initial equilibrium or quasi-equilibrium contact angles are generally larger than 90 deg and do not significantly vary with temperature. The subsequent remarkable decrease in the contact angle mainly results from the progressive decrease in the droplet volume rather than the advance of the solid-liquid interfacial front. The significant effect of temperature on the wetting kinetics is essentially related to its effect on the reaction and molten Al penetration progress. For systems with a considerable decrease in the droplet volume during reactive wetting, a criterion for evaluation of the true wetting improvement was proposed.


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