TITLE

Combinatorial Methods Study of Confinement Effects on the Reaction Front in Ultrathin Chemically Amplified Photoresists

AUTHOR(S)
Wang, Michael X.; Lin, Eric K.; Karim, Alamgir; Fasolka, Michael J.
PUB. DATE
September 2003
SOURCE
AIP Conference Proceedings;2003, Vol. 683 Issue 1, p448
SOURCE TYPE
Conference Proceeding
DOC. TYPE
Article
ABSTRACT
Sub-100 nm lithography requires more understanding of photoresist material properties and processing conditions to achieve necessary critical dimension control of patterned structures. As resist thickness and feature linewidth decrease, fundamental material properties of the confined resist polymer can deviate from bulk values and impact important processing parameters such as the postexposure bake (PEB) temperature. The significance of these confinement-induced deviations on image or linewidth spread have just been reported recently by Goldfarb et al.. Using a high throughput combinatorial method, we explore this problem much more efficiently, and thoroughly, while offering an increased amount of data. In this work, we employed temperature and thickness gradients to characterize the spatial extent of the reaction-diffusion process in a model chemically amplified photoresist system as a function of PEB temperature and protected polymer thickness. Bilayer samples were prepared with a bottom layer of a protected polymer [poly(p-tert-butoxycarboxystyrene)] and a top layer of a deprotected polymer [poly(4-hydroxystyrene)] loaded with 5 % by mass fraction of a photoacid generator. After flood exposure, PEB, and development, changes in the thickness of the protected polymer provided a measure of the extent of the reaction front between the polymer layers. The velocity of the reaction front was significantly reduced with decreasing thickness of the protected polymer layer when its thickness was less than 60 nm or with decreasing PEB temperature under identical processing conditions. © 2003 American Institute of Physics
ACCESSION #
10969812

 

Related Articles

  • Photoresist-based polymer resonator antennas with permanent frame. Rashidian, A.; Klymyshyn, D.M.; Aligodarz, M.Tayfeh; Boerner, M.; Mohr, J. // Electronics Letters;4/26/2012, Vol. 48 Issue 9, p475 

    Photoresist-based polymer resonator antennas (PRAs) with permanent frame have been fabricated and measured. High-aspect-ratio frames were precisely fabricated by deep exposure lithography and subsequently filled with ceramic-polymer microcomposites. The antenna was fed by a slot on the ground...

  • Sub-diffraction-limited patterning using evanescent near-field optical lithography. Alkaisi, M. M.; Blaikie, R. J. // Applied Physics Letters;11/29/1999, Vol. 75 Issue 22, p3560 

    Studies sub-diffraction-limited patterning using evanescent near-field optical lithography. Employment of ultrathin photoresist layers in conjunction with conformable photomasks; Polarization for the grating structures.

  • Fabrication of 100 nm metal lines on flexible plastic substrate using ultraviolet curing nanoimprint lithography. Heon Lee; Sunghoon Hong; Kiyeon Yang; Kyungwoo Choi // Applied Physics Letters;4/3/2006, Vol. 88 Issue 14, p143112 

    Since polymer is flexible, lightweight, reliable and transparent and its material properties can easily be modified, it is a suitable substrate material for organic electronic devices, biomedical devices, and especially for flexible displays. To build a nano-device on a polymer substrate, nano...

  • Application of polymers to photoresist materials. Soyano, A. // International Polymer Science & Technology;2012, Vol. 39 Issue 5, p47 

    The article offers information on the polymer application in the development of photoresist materials. It mentions that the photoresist which was used in large scale integration (LSI) production lithography indicates a polymer material where radiochemical or photochemical reaction occurs and...

  • A simple tool to cut the protruding flange of photoresist formed in spin coating process for lithography technology. He, Y. Z.; Niu, H.; Qi, J. J.; Zhao, Y. G.; Cao, B. S. // Review of Scientific Instruments;May2002, Vol. 73 Issue 5, p2205 

    A facile tool is suggested for cutting the protruding flange of photoresist (PR) along the edge of a small substrate surface, which is caused by the spin-coating process in lithography. When the dimension of the substrate reduces to a few millimeters, the edge problem of PR cannot be ignored....

  • Substrates with topography. Neisser, M.; Grozev, G.; Maenhoudt, M.; Lepage, M.; Struyf, H. // Solid State Technology;Aug2000, Vol. 43 Issue 8, p127 

    Evaluates a thin, silicon-containing imaging photoresist system, called TIS-2000, designed to accommodate difficult substrate topography for lithography. Analysis on the TIS-2000 process flow; Advantages of the thin imaging system; Discussion on the process integration of the system.

  • Direct temperature metrology helps minimize CA-resist CD variation. Parker, Jeffrey M.; Dean, Kim R.; Miller, Daniel A. // Solid State Technology;Sep2000, Vol. 43 Issue 9, p139 

    Deals with the temperature measurement technique used to minimize chemically-amplified (CA) photoresists critical dimension (CD) variation during post-exposure bake in lithography. Role played by thermal processing in photoresists function; Approach taken in the investigation of CD...

  • Exploring the needs and tradeoffs for immersion resist topcoating. Slezak, Mark; Zhi Liu; Hung, Raymond // Solid State Technology;Jul2004, Vol. 47 Issue 7, p91 

    Examines the practical issues associated with using a topcoat materials. Proposal of immersion lithography as the bridge to extent lithography to the node; Feasibility of immersion lithography; Impact of resist component leaching on the resist profile and process window.

  • Plasma-deposited silylation resist for 193 nm lithography. Horn, Mark W.; Rothschild, Mordechai // Applied Physics Letters;1/8/1996, Vol. 68 Issue 2, p179 

    Investigates the process of an all-dry positive tone silylation resist for 193 nanometer lithography. Benefits of an all-dry silylation method; Comparison between dry-developed and wet-developed photoresist; Accounts on several constraints of plasma-deposited photoresist synthesis.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics